unisonic technologies co., ltd mmbt4401 npn silicon transistor www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r206-035.f npn general purpose amplifier ? description the utc mmbt4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500ma. sot-323 1 2 3 sot-23 1 2 3 ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing mmbt4401-ae3-r mmbt4401l-ae3-r mmbt4401g-ae3-r sot-23 e b c tape reel mmbt4401-al3-r mmbt4401l-al3-r mmbt 4401g-al3-r sot-323 e b c tape reel ? marking
mmbt4401 npn silicon transistor unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r206-035.f ? absolute maximum rating (ta=25c, unless otherwise specified) (note) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current-continuous i c 600 ma total device dissipation derate above 25 p d 350 2.8 mw mw/c junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note 1. these are steady stat e limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. 2. absolute maximum ratings are those values beyon d which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data (ta=25c, unless otherwise specified) characteristic symbol rating unit junction to ambient ja 357 c /w ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector-base breakdown voltage bv cbo i c =0.1ma, i e =0 60 v collector-emitter breakdown voltage (note) bv ceo i c =1ma, i b =0 40 v emitter-base breakdown voltage bv ebo i e =0.1ma, i c =0 6 v collector cut-off current i cex v ce =35v, v eb =0.4v a base cut-off current i bl v ce =35v, v eb =0.4v a on characteristics (note) h fe1 v ce =1v, i c =0.1ma 20 h fe2 v ce =1v, i c =1ma 40 h fe3 v ce =1v, i c =10ma 80 h fe4 v ce =1v, i c =150ma 100 300 dc current gain h fe5 v ce =2v, i c =500ma 40 collector-emitter satu ration voltage v ce(sat1 ) v ce(sat2) i c =150ma, i b =15ma i c =500ma, i b =50ma 0.4 0.75 v v base-emitter satura tion voltage v be(sat1) v be(sat2) i c =150ma, i b =15ma i c =500ma, i b =50ma 0.75 0.95 1.2 v v small signal characteristics1 current gain bandwidth product f t v ce =10v, i c =20ma, f=100mhz 250 mhz collector-base capacitance c cb v cb =5v, i e =0, f=140khz 6.5 pf emitter-base capacitance c eb v be =0.5v, i c =0, f=140khz 30 pf input impedance hie v ce =10v, i c =1ma, f=1khz 1 15 k ? voltage feedback ratio hre v ce =10v, i c =1ma, f=1khz 0.1 8 10 -4 small-signal current gain hfe v ce =10v, i c =1ma, f=1khz 40 500 output admittance hoe v ce =10v, i c =1ma, f=1khz 1 30 mhos switching characteristics delay time t d v cc =30v, v eb =2v i c =150ma i b1 =15ma 15 ns rise time t r v cc =30v, v eb =2v i c =150ma i b1 =15ma 20 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma i b1 = i b2 =15ma 30 ns note: pulse test: pulsewidth 300 s, duty cycle 2%
mmbt4401 npn silicon transistor unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r206-035.f ? test circuit 6v 30v 0 figure2. saturated turn -off switching timer 220ns -1.5v 1k note:bv ebo =5v 37 1k 50
mmbt4401 npn silicon transistor unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r206-035.f ? typical characteristics 0.1 1 10 100 300 200 0 collector current, i c (ma) typical pulsed current gain vs collector current typical pulsed current gain, h fe 0.1 100 0.3 100 110 500 collector-emitter saturation voltage vs collector current collector-emitter voltage, v cesat (v) 0.2 0.3 3 30 300 400 500 v ce =5v 125 25 -40 0.4 collector current, i c (ma) 125 25 -40 =10 c c c c c c base-emitter voltage, v besat (v) base-emitter onvoltage, v beon (v) ambient temperature, t a ( ) collector-cutoff current vs ambient temperature 500 0.1 75 25 50 100 125 150 100 1 10 v cb =40v 0.1 1 10 100 12 4 reverse bias voltage (v) emitter transition and output capacitance vs reve rse bias voltage 8 16 20 f=1mhz c te c ob
mmbt4401 npn silicon transistor unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r206-035.f ? typical characteristics(cont.) 10 100 1000 160 0 collector current, i c (ma) turn on and turn off times vs collector current time (ns) 80 240 320 400 v cc =25v t off t on i b1 =i b2 = i c 10 10 100 1000 160 0 collector current, i c (ma) switching times vs collector current time (ns) 80 240 320 400 v cc =25v t s t f i b1 =i b2 = i c 10 t r t d power dissipation, p d (w) char.relative to voltage at i c =10ma char.relative to voltage at t a =25 char.relative to voltage at v ce =10v
mmbt4401 npn silicon transistor unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r206-035.f ? typical characteristics(cont.) v ce , collector-emitter voltage (volts) 200 600 20 010 30 s.o.a ic, collector current (ma) 400 800 50 40 1000 1200 100 80 60 40 20 1ms 1s 1400 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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